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FLL21E004ME
FEATURES
High Voltage Operation : VDS=28V High Power : P1dB=36dBm(typ.) at f=2.17GHz High Gain: G1dB=14dB(typ.) at f=2.17GHz Broad Frequency Range : 2100 to 2200MHz Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS Item Symbol
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Condition
Rating
32 -3 18.75 -65 to +175 200
Unit
V V W oC oC
VDS VGS Tc=25oC Pt Tstg Tch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR Tch
Condition
RG=100 RG=100
Limit
<28 <6.1 >-1.0 155
Unit
V mA mA oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min.
Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Efficiency Thermal Resistance Vp VGSO P1dB G1dB d Rth Channel to Case VDS=5V IDS=0.6mA IGS=-6uA VDS=28V f=2.17GHz IDS(DC)=50mA -0.1 -5 35.0 13.0 -
Limit Typ. Max.
-0.2 36.0 14.0 40 7.0 -0.5 8.0
Unit
V V dBm dB %
oC
G.C.P.:Gain Compression Point
Edition 1.4 Mar. 2004
1
FLL21E004ME
High Voltage - High Power GaAs FET
Output Power & Drain Efficiency vs. Input Power @VDS=28V IDS=50mA f=2.17GHz
38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 6 8 10 12 14 16 18 20 22 24 26 Input Pow er [dBm ] Pout Drain Efficiency
90 80 60 50 40 30 20 10 0
Output Power [dBm]
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power @VDS=28V IDS=50mA fo=2.3125GHz f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation
-25 -30 -35 35 30
Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=50mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
-25
Drain Efficiency [%]
Drain Efficiency [%]
70
35 30 25 20 15 10 5 0 16 18 20 22 24 26 28 30 32 Output Pow er[dBm ]
Drain Efficiency [%]
-30
ACLR [dBc]
25 20 15 10 5 0 16 18 20 22 24 26 28 30 32 IM3 Output Pow er [dBm ] IM5 Drain Efficiency
-35 -40 -45 -50 -55 -60
IMD [dBc]
-40 -45 -50 -55 -60
+/-5MHz
+/-10MHz
Drain Efficiency
2
FLL21E004ME
High Voltage - High Power GaAs FET
S-Parameters @VDS=28V IDS=50mA f=0.5 to 5.0 GHz
+25j
5. 0
+10j
4. 0 3. 0 2. 0 1. 0 5. 0
0
-10j
4. 0 3. 0 2. 0
0. H z 5G
-25j
6 180 10 Scale for |S21|
0.5 -90
Scale for |S 12|
!freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.1 0.973 -67.8 24.531 139.8 0.007 45.3 0.630 -19.0 0.2 0.950 -107.7 17.618 114.5 0.009 30.2 0.580 -30.8 +50j 0.3 0.938 -128.8 13.004 98.7 0.010 19.1 0.566 -40.1 +100j 0.4 0.932 -141.4 10.107 87.6 0.010 13.3 0.571 -48.7 0.5 0.928 -149.7 8.139 78.6 0.009 10.0 0.584 -57.3 1 0.930 -167.2 3.734 47.9 0.005 14.2 0.686 -90.9 1.1 0.932 -168.9 3.329 43.1 0.005 21.6 0.705 -95.9 +250j 1.2 0.934 -170.3 2.981 38.9 0.004 37.1 0.722 -100.5 1.3 0.937 -172.4 2.675 34.5 0.005 43.2 0.741 -105.2 1.4 0.936 -173.4 2.432 30.3 0.006 56.3 0.754 -109.2 1.5 0.936 -174.5 2.200 26.6 0.006 71.9 0.772 -112.8 1.6 0.937 -175.4 2.010 23.4 0.006 83.7 0.782 -115.7 1.7 0.937 -176.5 1.867 19.4 0.008 81.8 0.796 -118.8 100 1.8 0.936 -177.2 1.713 16.5 0.009 89.3 0.813 -121.6 0. H z 5G -250j 50 1.9 0.942 -178.0 1.598 13.4 0.009 93.0 0.819 -123.8 1. 0 1.95 0.935 -178.4 1.545 11.9 0.011 90.1 0.826 -125.6 25 2 0.940 -178.9 1.496 10.3 0.011 90.8 0.829 -127.0 10 2.05 0.937 -179.2 1.436 8.5 0.013 91.6 0.834 -127.9 -100j 2.1 0.943 -179.9 1.388 7.5 0.012 89.9 0.838 -128.7 S 11 -50j 2.11 0.941 179.9 1.377 6.8 0.013 94.5 0.842 -129.0 S 22 2.12 0.943 179.7 1.371 7.0 0.012 93.4 0.845 -129.4 2.13 0.938 179.9 1.363 6.8 0.012 92.5 0.835 -129.4 2.14 0.940 179.9 1.356 6.2 0.014 97.1 0.838 -129.5 +90 2.15 0.938 179.9 1.343 6.4 0.012 90.2 0.842 -129.9 2.16 0.945 179.9 1.336 6.1 0.013 92.3 0.844 -130.1 0. H z 5G 2.17 0.946 179.5 1.338 5.4 0.015 93.0 0.846 -130.1 2.18 0.937 179.4 1.320 5.1 0.014 98.4 0.847 -130.3 2.19 0.938 179.5 1.310 4.8 0.014 90.1 0.843 -130.8 2.2 0.937 179.3 1.303 4.9 0.014 95.6 0.849 -131.0 2.25 0.937 179.0 1.271 3.4 0.015 92.6 0.857 -131.9 1. 0 2.3 0.942 178.5 1.232 1.7 0.015 95.0 0.857 -132.7 2.35 0.944 178.2 1.194 0.3 0.016 96.1 0.859 -133.6 2. 0 0 3 2.4 0.942 177.6 1.164 -1.1 0.018 94.3 0.861 -134.4 4 5 2.5 0.942 177.2 1.103 -3.1 0.019 97.2 0.878 -136.3 2.6 0.941 176.5 1.054 -6.0 0.019 98.5 0.878 -138.1 2.7 0.943 175.6 1.005 -8.0 0.021 93.2 0.883 -139.4 0.3 2.8 0.943 174.7 0.963 -10.3 0.023 92.0 0.895 -140.6 2.9 0.944 174.0 0.923 -13.5 0.025 92.1 0.897 -142.4 3 0.945 173.1 0.892 -15.1 0.027 91.4 0.897 -143.1
S 12 S 21
3
FLL21E004ME
High Voltage - High Power GaAs FET
BOARD LAYOUT

r=10.45 t=1.2mm
4
FLL21E004ME
High Voltage - High Power GaAs FET
ME Package Outline Metal-Ceramic Hermetic Package
PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN 4 : SOURCE(Flange) Unit : mm
5
FLL21E004ME
High Voltage - High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
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